Chen-Fu Lin

Title: Innovations of Inventor Chen-Fu Lin

Introduction

Chen-Fu Lin is a notable inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of four patents. His work primarily focuses on enhancing the functionality and efficiency of metal-oxide-semiconductor field-effect transistors (MOSFETs).

Latest Patents

One of his latest patents is titled "Structure for MOSFET sensor." This invention provides a structure that includes a MOSFET, a sensing membrane, and a reference electrode. The design ensures that the reference electrode and the sensing membrane are uniformly and electrically coupled, stabilizing the working signal of the MOSFET sensor. Another significant patent is the "Hydrogen ion-sensitive field effect transistor and manufacturing method thereof." This invention simplifies the manufacturing process of a hydrogen ion-sensitive field effect transistor by eliminating the need for a film deposition process, thus enhancing efficiency.

Career Highlights

Chen-Fu Lin has worked with several prestigious institutions, including the National Chip Implementation Center and the National Applied Research Laboratories. He has also been associated with Seoul National University, where he has contributed to various research initiatives.

Collaborations

Throughout his career, Chen-Fu Lin has collaborated with notable colleagues such as Ying-Zong Juang and Hann-Huei Tsai. Their joint efforts have further advanced the field of semiconductor technology.

Conclusion

In summary, Chen-Fu Lin is a distinguished inventor whose work in semiconductor technology has led to innovative patents that enhance the functionality of MOSFETs. His contributions continue to impact the industry positively.