The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 22, 2014
Filed:
Mar. 13, 2012
Ying-zong Juang, Hsinchu, TW;
Hann-huei Tsai, Hsinchu, TW;
Hsin-hao Liao, Hsinchu, TW;
Chen-fu Lin, Hsinchu, TW;
Ying-Zong Juang, Hsinchu, TW;
Hann-Huei Tsai, Hsinchu, TW;
Hsin-Hao Liao, Hsinchu, TW;
Chen-Fu Lin, Hsinchu, TW;
Seoul National University Industry Foundation, Seoul, KR;
Abstract
A structure for a metal-oxide-semiconductor field-effect transistor (MOSFET) sensor is provided. The structure includes a MOSFET, a sensing membrane, and a reference electrode. The reference electrode and the sensing membrane are formed on the first surface of the MOSFET and are arranged in such a way that the reference electrode and the sensing membrane are uniformly and electrically coupled to each other. Thus, the electric field between the sensing membrane and the reference electrode is uniformly distributed therebetween to stabilize the working signal of the MOSFET sensor.