The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 18, 2013
Filed:
Mar. 16, 2010
Chin-long Wey, Hsinchu, TW;
Chin-fong Chiu, Hsinchu, TW;
Ying-zong Juang, Hsinchu, TW;
Hann-huei Tsai, Hsinchu, TW;
Chen-fu Lin, Hsinchu, TW;
Chin-Long Wey, Hsinchu, TW;
Chin-Fong Chiu, Hsinchu, TW;
Ying-Zong Juang, Hsinchu, TW;
Hann-Huei Tsai, Hsinchu, TW;
Chen-Fu Lin, Hsinchu, TW;
Abstract
A hydrogen ion-sensitive field effect transistor and a manufacturing method thereof are provided. The hydrogen ion-sensitive field effect transistor includes a semiconductor substrate, an insulating layer, a transistor gate, and a sensing film. A gate area is defined on the semiconductor substrate having a source area and a drain area. The insulating layer is formed within the gate area on the semiconductor substrate. The transistor gate is deposited within the gate area and includes a first gate layer. Further, the first gate layer is an aluminum layer, and a sensing window is defined thereon. The sensing film is an alumina film formed within the sensing window by oxidizing the first gate layer. Thus, the sensing film is formed without any film deposition process, and consequently the manufacturing method is simplified.