Chen-Che Huang

Title: Innovations of Inventor Chen-Che Huang

Introduction

Chen-Che Huang is a notable inventor based in Campbell, CA (US). He has made significant contributions to the field of non-volatile storage technology, holding a total of 5 patents. His work has been instrumental in advancing the capabilities of memory devices.

Latest Patents

One of his latest patents is titled "Method of patterning NAND strings using perpendicular SRAF." This patent describes a lithography mask that includes a plurality of patterning features formed on a mask substrate, along with a first plurality of sub-resolution assist features (SRAFs) that are formed substantially perpendicular to the patterning features. Another significant patent is "Bit-line connections for non-volatile storage." This patent discloses various methods for fabricating bit line connections for non-volatile storage devices. It details at least two different types of bit line connections that may be used between memory cells and bit lines, highlighting their structural differences.

Career Highlights

Throughout his career, Chen-Che Huang has worked with prominent companies in the technology sector, including SanDisk Technologies Inc. and SanDisk 3D LLC. His experience in these organizations has allowed him to develop innovative solutions that enhance the performance of storage devices.

Collaborations

Chen-Che Huang has collaborated with several talented individuals in his field, including Chun-Ming Wang and Masaaki Higashitani. These collaborations have contributed to the successful development of his patented technologies.

Conclusion

In summary, Chen-Che Huang is a distinguished inventor whose work in non-volatile storage technology has led to multiple patents and significant advancements in the industry. His contributions continue to influence the future of memory devices.