The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 18, 2011
Filed:
Jan. 19, 2010
Chun-ming Wang, Fremont, CA (US);
Chen-che Huang, Campbell, CA (US);
Masaaki Higashitani, Cupertino, CA (US);
George Matamis, San Jose, CA (US);
Chun-Ming Wang, Fremont, CA (US);
Chen-Che Huang, Campbell, CA (US);
Masaaki Higashitani, Cupertino, CA (US);
George Matamis, San Jose, CA (US);
SanDisk 3D LLC, Milpitas, CA (US);
Abstract
Methods for forming patterns having triple the line frequency of a first pattern using only a single spacer are disclosed. For example, the first pattern is formed in a first and a second material using a lithographic process. Sidewall spacers are formed from a third material adjacent to exposed sidewalls of features in the second material. The width of the features in the first pattern in the first material is reduced. For example, the width is reduced to about the target width of features in a final pattern. The width of features in the first pattern in the second material is reduced using remaining portions of the first material as a mask. A second pattern is formed based on remaining portions of the second material and the sidewall spacers. The features in the second pattern may be lines having about ⅓ the width of lines in the first pattern.