Hefei, China

Chaojun Sheng

USPTO Granted Patents = 4 

Average Co-Inventor Count = 1.3

ph-index = 1


Company Filing History:


Years Active: 2023-2024

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4 patents (USPTO):Explore Patents

Title: Chaojun Sheng: Innovator in Capacitive Structures

Introduction

Chaojun Sheng is a prominent inventor based in Hefei, China. He has made significant contributions to the field of capacitive structures, holding a total of four patents. His work focuses on innovative methods for forming capacitor array structures and manufacturing capacitive structures.

Latest Patents

Chaojun Sheng's latest patents include a method for forming a capacitor array structure. This method involves several steps, such as providing a substrate with an exposed capacitor contact and forming a bottom supporting layer. The process also includes creating a filling layer that covers the capacitor contact and the surface of the bottom supporting layer. Additionally, he has developed a manufacturing method for a capacitive structure that utilizes a semiconductor base and involves multiple etching processes to create capacitive holes.

Career Highlights

Chaojun Sheng is currently employed at Changxin Memory Technologies, Inc., where he continues to innovate in the field of semiconductor technology. His expertise in capacitive structures has positioned him as a valuable asset to his company and the industry.

Collaborations

Chaojun Sheng has collaborated with notable coworkers, including Wenjia Hu and Yong Lu. Their combined efforts contribute to the advancement of technology in their field.

Conclusion

Chaojun Sheng's work in capacitive structures showcases his innovative spirit and dedication to advancing technology. His patents reflect a commitment to improving manufacturing processes and enhancing the capabilities of semiconductor devices.

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