The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 05, 2024
Filed:
Mar. 01, 2021
Changxin Memory Technologies, Inc., Hefei, CN;
Chaojun Sheng, Hefei, CN;
Wenjia Hu, Hefei, CN;
CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei, CN;
Abstract
A method for forming a capacitor array structure includes the following steps: providing a substrate, a capacitor contact being exposed on a surface of the substrate, and the substrate including an array region and a peripheral region; forming a bottom supporting layer covering the substrate and the capacitor contact, the bottom supporting layer having a gap therein; forming a filling layer filling the gap and covering the capacitor contact and the surface of the bottom supporting layer, a thickness of the filling layer located at the peripheral region being larger than that of the filling layer located at the array region; forming supporting layers and sacrificial layers alternately stacked in a direction perpendicular to the substrate; forming a capacitor hole; sequentially forming a lower electrode layer on an inner wall of the capacitor hole.