The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 08, 2023

Filed:

Jun. 21, 2021
Applicant:

Changxin Memory Technologies, Inc., Hefei, CN;

Inventors:

Chaojun Sheng, Hefei, CN;

Yong Lu, Hefei, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H10B 12/315 (2023.02); H01L 28/75 (2013.01); H01L 28/91 (2013.01); H10B 12/0335 (2023.02);
Abstract

The present disclosure provides a capacitor structure and a method for manufacturing same. The capacitor structure includes: a substrate, a first capacitor contact layer, a bottom electrode layer, a capacitor dielectric layer, and a top electrode layer, where the first capacitor contact layer is arranged on the substrate in an array manner, the bottom electrode layer surrounds a side wall of the first capacitor contact layer and extends in a direction of the first capacitor contact layer away from the substrate, the capacitor dielectric layer covers an upper surface of the substrate, a surface of the bottom electrode layer and an upper surface of the first capacitor contact layer, and the top electrode layer covers a surface of the capacitor dielectric layer.


Find Patent Forward Citations

Loading…