Company Filing History:
Years Active: 2013
Title: Chao Xia - Innovator in SOI High-Voltage Power Devices
Introduction
Chao Xia is a prominent inventor based in Shanghai, China. He has made significant contributions to the field of semiconductor technology, particularly in the development of manufacturing methods for SOI (Silicon On Insulator) high-voltage power devices. With a total of 3 patents to his name, Chao Xia is recognized for his innovative approaches to enhancing the performance and reliability of power devices.
Latest Patents
Chao Xia's latest patents include a manufacturing method of SOI high-voltage power devices. This invention focuses on a detailed process that involves forming oxide layers and creating regions for P-type and N-type doping, ultimately leading to the formation of a high-voltage power device. Another notable patent is the method for fabricating SOI high voltage power chips with trenches. This method outlines the steps for creating trenches and drain regions, ensuring that the resulting chip can withstand voltages above 700V.
Career Highlights
Chao Xia is affiliated with the Chinese Academy of Sciences, where he conducts research and development in semiconductor technologies. His work has been instrumental in advancing the capabilities of high-voltage power devices, making them more efficient and reliable for various applications.
Collaborations
Chao Xia collaborates with esteemed colleagues such as Xinhong Cheng and Zhongjian Wang. Their combined expertise contributes to the innovative research and development efforts at the Chinese Academy of Sciences.
Conclusion
Chao Xia's contributions to the field of semiconductor technology, particularly in SOI high-voltage power devices, highlight his role as a leading inventor. His patents reflect a commitment to innovation and excellence in engineering.