The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 19, 2013
Filed:
Sep. 07, 2010
Xinhong Cheng, Shanghai, CN;
Zhongjian Wang, Shanghai, CN;
Yuehui Yu, Shanghai, CN;
Dawei He, Shanghai, CN;
Dawei Xu, Shanghai, CN;
Chao Xia, Shanghai, CN;
Xinhong Cheng, Shanghai, CN;
Zhongjian Wang, Shanghai, CN;
Yuehui Yu, Shanghai, CN;
Dawei He, Shanghai, CN;
Dawei Xu, Shanghai, CN;
Chao Xia, Shanghai, CN;
Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Changning District Shanghai, CN;
Abstract
A method of manufacturing a SOI high voltage power chip with trenches is disclosed. The method comprises: forming a cave and trenches at a SOI substrate; filling oxide in the cave; oxidizing the trenches, forming oxide isolation regions for separating low voltage devices at the same time; filling oxide in the oxidized trenches; and then forming drain regions, source regions and gate regions for a high voltage power device and low voltage devices. The process involves depositing an oxide layer overlapping the cave of the SOI substrate. A SOI high voltage power chip thus made will withstand at least above 700V voltage.