Yongin, South Korea

Chanjin Park

This inventor holds 21 USPTO granted patents and 2 published patent applications, primarily in Semiconductor Devices. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2012-2024.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Chanjin Park. Retrieved from https://idiyas.com/inventor/chanjin-park

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 21 

% Patents Active = 90.5

Average Co-Inventor Count = 5.2

ph-index = 5

Forward Citations = 83(Granted Patents)


Location History:

  • Gyeonggi-do, KR (2012 - 2015)
  • Yongin-si, KR (2012 - 2024)

Company Filing History:


Years Active: 2012-2024

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Areas of Expertise:
Three-Dimensional Memory
Semiconductor Devices
Fabrication Methods
Non-Volatile Memory
Charge Trap Layers
Leakage Current
Magnetic Devices
Sub-Plates
Blocking Leakage Current
Memory Device Manufacturing
21 patents (USPTO):Explore Patents

Title: Innovations of Chanjin Park in Semiconductor Memory Technology

Introduction: Chanjin Park is a highly accomplished inventor based in Yongin-si, South Korea. With a remarkable portfolio of 21 patents, he has significantly contributed to the field of semiconductor memory technology. His innovative approaches are paving the way for advancements in data storage solutions.

Latest Patents: Among his latest contributions are patents for three-dimensional semiconductor memory devices and methods of fabricating the same. These innovative devices feature an electrode structure made up of sequentially-stacked electrodes on a substrate. The design includes semiconductor patterns that penetrate this electrode structure, and memory elements comprising a first pattern and a second pattern situated between the semiconductor patterns and the electrode structure. Notably, the first pattern extends vertically to cross the electrodes, while the second pattern extends horizontally to intersect the semiconductor patterns, adding complexity and efficiency to memory storage.

Career Highlights: Chanjin Park's career is marked by his work with Samsung Electronics Co., Ltd., where he leverages his expertise to develop cutting-edge technologies. His contributions have not only advanced product offerings but have also positioned the company as a leader in the semiconductor industry.

Collaborations: Throughout his career, Chanjin has collaborated with talented individuals such as Hanmei Choi and Toshiro Nakanishi. These collaborations foster innovative solutions and enhance the development of new technologies in the semiconductor field.

Conclusion: Chanjin Park stands out as a key figure in the evolution of semiconductor memory devices. His innovative patents and collaborative efforts at Samsung Electronics Co., Ltd. continue to drive advancements in technology, making significant impacts in the industry. As research and development in this field progress, Chanjin's contributions will likely inspire future innovations.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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