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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9865698 B1

PDFFull Text
Date of Patent:
Jan. 09, 2018

Filed:

Feb. 25, 2016

Semiconductor device blocking leakage current and method of forming the same

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-Do, KR;

Inventors:

Hyun-Kwan Yu, Suwon-si, KR;

Kooktae Kim, Hwaseong-si, KR;

Chanjin Park, Yongin-si, KR;

Dongsuk Shin, Yongin-si, KR;

Youngdal Lim, Suwon-si, KR;

Sahwan Hong, Suwon-si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-Do, KR;

Attorney:

F. Chau & Associates, LLC

Primary Examiner:

Bitew Dinke

Int. Cl.
CPC ...
H01L 27/108 (2006.01); H01L 29/49 (2006.01); H01L 29/08 (2006.01); H01L 29/16 (2006.01); H01L 29/161 (2006.01); H01L 29/165 (2006.01); H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 21/8234 (2006.01); H01L 27/088 (2006.01);
U.S. Cl.
CPC ...
H01L 29/4991 (2013.01); H01L 21/823431 (2013.01); H01L 21/823481 (2013.01); H01L 27/0886 (2013.01); H01L 29/0653 (2013.01); H01L 29/0847 (2013.01); H01L 29/161 (2013.01); H01L 29/165 (2013.01); H01L 29/1608 (2013.01); H01L 29/7848 (2013.01);
Abstract

A semiconductor device includes a gate assembly disposed on a device isolation layer, a gate spacer disposed on a side surface of the gate assembly, a contact assembly disposed on the gate spacer, an air gap disposed between the device isolation layer and the contact assembly, and a first spacer capping layer disposed between the gate spacer and the air gap. The first spacer capping layer has an etch selectivity with respect to the gate spacer.

Find Patent Forward Citations

Yu, Hyun-Kwan. (2018). Semiconductor device blocking leakage current and method of forming the same (U.S. Patent No. 9865698). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9865698

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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