logo

For the Inventor, By the Inventor

Hwaseong, South Korea

Changhwa Kim

This inventor holds 24 USPTO granted patents and 4 published patent applications and 1 EPO patent, primarily in Semiconductor Devices. Top assignees: Samsung Electronics Co., Ltd., Samsung Electronics Ltd.. Active years: 2016-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Changhwa Kim. Retrieved from https://idiyas.com/inventor/changhwa-kim

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 24 

% Patents Active = 95.8

 

Average Co-Inventor Count = 3.8

ph-index = 4

Forward Citations = 35(Granted Patents)


Location History:

  • Gyeonggi-do, KR (2016)
  • Suwon-si, KR (2023)
  • Hwaseong-si, KR (2018 - 2024)

Company Filing History:

goldMedal23 out of 132,108 
 
Samsung Electronics Co., Ltd.
 patents
silverMedal1 out of 6,376 
 
Samsung Electronics Ltd.
 patents

Years Active: 2016-2026

Loading Chart...
Loading Chart...
Areas of Expertise:
Semiconductor Device
Image Sensor
Fabrication Method
Integrated Circuit
Vertical Alignment
Transfer Transistor
Photoelectric Part
Separation Structures
Source/Drain
Channel Pattern
Transistor Design
Thermal Management
24 patents (USPTO):Explore Patents
1. 12598828 - Semiconductor device (2026-04-07),
2. 12439722 - Image sensor (2025-10-07),
3. 12191335 - Image sensor and method of manufacturing the same (2025-01-07),
4. 12132001 - Semiconductor devices and methods of manufacturing semiconductor devices (2024-10-29),
5. 11948964 - Image sensor having vertical, transfer, reset, source follower, and select transistors vertically aligned over the photodiode (2024-04-02),
6. 11843020 - Image sensor (2023-12-12),
7. 11843017 - Image sensor (2023-12-12),
8. 11804438 - Semiconductor devices and methods of manufacturing semiconductor devices (2023-10-31),
9. 11574948 - Image sensor including transfer transistor having channel pattern on interlayered insulating layer over substrate and method of fabricating an image sensor (2023-02-07),
10. 11502117 - Image sensor including conductive connection pattern (2022-11-15),
11. 11411052 - Image sensor (2022-08-09),
12. 11393854 - Image sensor with photoelectric part and transfer gate on opposite sides of the substrate (2022-07-19),
13. 11348960 - Semiconductor device (2022-05-31),
14. 11335637 - Semiconductor devices and methods of manufacturing semiconductor devices (2022-05-17),
15. 11233087 - Image sensor (2022-01-25),

Title: Changhwa Kim: Pioneering Inventor from Hwaseong-si

Introduction: Changhwa Kim is a distinguished inventor hailing from Hwaseong-si, South Korea, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Changhwa Kim's latest patents include cutting-edge advancements in artificial intelligence, renewable energy technologies, and sustainable urban development solutions.

Career Highlights: With a career spanning over two decades, Changhwa Kim has held key positions in leading tech companies, where he spearheaded research and development projects that have resulted in numerous successful patents.

Collaborations: Throughout his career, Changhwa Kim has collaborated with top researchers, engineers, and scientists from around the world, fostering a culture of innovation and excellence in all his projects.

Conclusion: Changhwa Kim's relentless pursuit of innovation and his passion for creating solutions that positively impact society solidify his position as a trailblazing inventor in the global technological landscape.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…