The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 07, 2026

Filed:

Apr. 28, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Hyoun-Jee Ha, Hwaseong-si, KR;

Changhwa Kim, Hwaseong-si, KR;

Jeongsoon Kang, Busan, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10F 39/00 (2025.01);
U.S. Cl.
CPC ...
H10F 39/807 (2025.01); H10F 39/8037 (2025.01); H10F 39/8053 (2025.01); H10F 39/8063 (2025.01);
Abstract

A semiconductor device includes a substrate, a gate pattern, and a conductive line pattern. The substrate has a first surface and a second surface and includes an isolation pattern that defines plural pixel regions, and a photoelectric conversion region in each pixel region and a transistor for each of the pixel regions. The gate pattern of the transistor is disposed on the first surface of the substrate. The conductive line pattern is disposed on the first surface of the substrate and vertically overlaps the isolation pattern in plan view. A top surface of the conductive line pattern is located at the same level as a top surface of the gate pattern, a width of the conductive line pattern is less than a width of the isolation pattern, and the isolation pattern comprises a conducive isolation pattern and a dielectric isolation pattern.


Find Patent Forward Citations

Loading…