The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 07, 2023
Filed:
Dec. 11, 2019
Samsung Electronics Co., Ltd., Suwon-si, KR;
Changhwa Kim, Suwon-si, KR;
Kwansik Kim, Suwon-si, KR;
Dongchan Kim, Suwon-si, KR;
Sang-Su Park, Suwon-si, KR;
Beomsuk Lee, Suwon-si, KR;
Taeyon Lee, Suwon-si, KR;
Hajin Lim, Suwon-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, KR;
Abstract
An image sensor and a method of fabricating the image sensor, the image sensor including a semiconductor substrate having a first floating diffusion region, a molding pattern over the first floating diffusion region and including an opening, a first photoelectric conversion part at a surface of the semiconductor substrate, and a first transfer transistor connecting the first photoelectric conversion part to the first floating diffusion region. The first transfer transistor includes a channel pattern in the opening and a first transfer gate electrode. The channel pattern includes an oxide semiconductor. The channel pattern also includes a sidewall portion that covers a side surface of the opening, and a center portion that extends from the sidewall portion to a region over the first transfer gate electrode.