Changcheng Gao

Title: Changcheng Gao and His Image Sensor Innovation.

Introduction

Changcheng Gao is an inventor based in Beijing, China. His patent work focuses on image-sensor technology, including structures designed to improve quantum efficiency, detection range, and light-sensing capability.

Latest Patents

Gao is associated with 1 patent, titled “Image Sensor and Fabrication Method Thereof.” The invention describes an image sensor with a first substrate and a photoelectric structure whose conductivity type is opposite to that of the substrate. The photoelectric structure contains a second doped region and multiple first doped regions connected to it. The second doped region is closer to the substrate’s first surface, while the first doped regions are farther from that surface. The first doped regions are no larger than the second doped region in the direction parallel to the surface. This arrangement is intended to improve quantum efficiency, the detection band, and photo-sensing capability.

Career Highlights

Gao’s listed company affiliations include Semiconductor Manufacturing International (Beijing) Corporation and Semiconductor Manufacturing International (Shanghai) Corporation. His patent reflects work in semiconductor image-sensor design and fabrication.

Collaborations

Gao’s listed coworkers include Dayong Yan and Qiang Shi. Their shared professional context includes semiconductor technology and image-sensor innovation.

Conclusion

Changcheng Gao’s patent describes a doped-region structure intended to enhance image-sensor performance, reflecting his contributions to semiconductor innovation in Beijing.