Chang Wan Hwang

Title: Chang Wan Hwang: Innovator in Molecular Layer Deposition

Introduction

Chang Wan Hwang is a notable inventor based in Sunnyvale, California. He has made significant contributions to the field of material deposition, holding two patents that showcase his innovative approaches. Hwang's work primarily focuses on enhancing the efficiency and effectiveness of deposition processes.

Latest Patents

Hwang's latest patents include a method for molecular layer deposition using a reduction process. This innovative technique involves depositing a material onto a substrate by exposing it to a metal-containing precursor. The process allows for the adsorption of metal atoms onto the substrate, followed by exposure to an organic precursor to deposit a layer of material. Additionally, the substrate is treated with radicals from a reducing agent, which increases the reactivity of the deposited material. The radicals are generated by applying a voltage differential to a gas, such as hydrogen. Hwang's second patent involves a depositing apparatus that utilizes a reciprocating susceptor for atomic layer deposition. This method allows for a more compact deposition device by reducing the number of required injectors or reactors, ultimately lowering costs.

Career Highlights

Chang Wan Hwang is currently employed at Veeco Allied Inc., where he continues to develop and refine his innovative techniques in material deposition. His work has been instrumental in advancing the capabilities of deposition technologies.

Collaborations

Hwang collaborates with Sang In Lee, contributing to the development of cutting-edge deposition methods and technologies.

Conclusion

Chang Wan Hwang's contributions to molecular layer deposition and atomic layer deposition highlight his role as an influential inventor in the field. His innovative patents reflect a commitment to advancing material deposition technologies, making a significant impact on the industry.