The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8771791 B1

PDF
Full Text
Expired
Date of Patent:
Jul. 08, 2014

Filed:

Oct. 13, 2011
Applicants:

Sang IN Lee, Sunnyvale, CA (US);

Chang Wan Hwang, Sunnyvale, CA (US);

Inventors:

Sang In Lee, Sunnyvale, CA (US);

Chang Wan Hwang, Sunnyvale, CA (US);

Assignee:

Veeco ALD Inc., Fremont, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/00 (2006.01); C23C 16/40 (2006.01);
U.S. Cl.
CPC ...
Abstract

Atomic layer deposition is performed by reciprocating a susceptor in two directions, subjecting a substrate on the susceptor to two different sequences of processes. By subjecting the susceptor to different sequences of processes, the substrate undergoes different processes that otherwise would have required an additional set of injectors or reactors. The reduced number of injectors or reactors enables a more compact deposition device, and reduces the cost associated with the deposition device.

Published as:
US2012094149A1; WO2012054323A1; TW201229298A; KR20130062374A; US8771791B2; KR101511457B1; TWI506161B;

Find Patent Forward Citations

Lee, Sang. (2014). Deposition of layer using depositing apparatus with reciprocating susceptor (U.S. Patent No. 8771791). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8771791

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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