Chang-hyun Bae

Title: Chang-hyun Bae: Innovator in Memory Technology

Introduction

Chang-hyun Bae is a prominent inventor based in Hwaseong, South Korea. He is known for his contributions to the field of memory technology, particularly through his work at Samsung Electronics Co., Ltd. With a total of 2 patents, Bae has made significant advancements in semiconductor memory devices.

Latest Patents

One of Bae's latest patents is for a memory module and electronic system that includes a plurality of memory devices. This innovative memory module features multiple data input/output pads, on-die termination circuits, transceiver circuits, and equalizer circuits. Each component is intricately connected to enhance the performance and efficiency of the memory module.

Another notable patent is for a semiconductor memory device that incorporates a delay lock loop (DLL) with a wide frequency range and a delay cell current reduction scheme. This device is designed to perform locking operations while minimizing current consumption. The DLL consists of serially connected delay cells that receive and delay an external clock signal, optimizing the device's functionality.

Career Highlights

Chang-hyun Bae has established himself as a key figure in the semiconductor industry through his innovative work at Samsung Electronics Co., Ltd. His patents reflect his commitment to advancing memory technology and improving device performance. Bae's expertise in this field has positioned him as a valuable asset to his company and the industry at large.

Collaborations

Bae has collaborated with several talented individuals, including Jun-Bae Kim and Jin Kwan Park. These collaborations have contributed to the development of cutting-edge technologies in the semiconductor sector.

Conclusion

Chang-hyun Bae's contributions to memory technology through his patents and work at Samsung Electronics Co., Ltd. highlight his role as an influential inventor in the field. His innovative approaches continue to shape the future of semiconductor devices.