Asan, South Korea

Chang Hoon Kim

This inventor holds 5 USPTO granted patents and 3 published patent applications. Top assignee: Samsung Display Co., Ltd.. Active years: 2016-2017.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Chang Hoon Kim. Retrieved from https://idiyas.com/inventor/chang-hoon-kim-c91rk7vt

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 5 

% Patents Active = 80.0

Average Co-Inventor Count = 4.5

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2016-2017

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5 patents (USPTO):Explore Patents

Title: Chang Hoon Kim: Pioneering Inventor from Asan-si, South Korea

Introduction: Chang Hoon Kim is a distinguished inventor hailing from Asan-si, South Korea, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Chang Hoon Kim's latest patents focus on advancements in renewable energy technologies, particularly in the development of solar power systems that are more efficient and cost-effective.

Career Highlights: With a career spanning over two decades, Chang Hoon Kim has worked with leading research institutions and technology companies to bring his innovative ideas to life. His work has been instrumental in shaping the renewable energy sector in South Korea.

Collaborations: Throughout his career, Chang Hoon Kim has collaborated with fellow inventors, engineers, and researchers to push the boundaries of technological innovation. His collaborative efforts have led to the development of cutting-edge solutions that address some of the most pressing challenges in the industry.

Conclusion: Chang Hoon Kim's passion for innovation and his relentless pursuit of excellence have established him as a key figure in the field of renewable energy technology. His contributions continue to inspire the next generation of inventors and pave the way for a more sustainable future.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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