Chang-Feng Yan

Title: The Innovations of Chang-Feng Yan

Introduction

Chang-Feng Yan is a prominent inventor based in Taoyuan, Taiwan. He has made significant contributions to the field of semiconductor technology, holding three patents to his name. His work focuses on advanced devices that enhance memory and operational efficiency in electronic systems.

Latest Patents

One of Chang-Feng Yan's latest patents is the Metal-insulator-semiconductor-insulator-metal (MISIM) device, which includes a semiconductor layer and an insulating layer disposed over the upper surface of the semiconductor layer. This innovative device features a back electrode located on the lower surface of the semiconductor layer, opposing the upper surface. Additionally, it incorporates first and second electrodes that are spaced apart and situated over the insulating layer. This design aims to improve the performance and functionality of memory devices.

Career Highlights

Throughout his career, Chang-Feng Yan has worked with notable organizations, including Taiwan Semiconductor Manufacturing Company Ltd. and National Taiwan University. His experience in these institutions has allowed him to develop cutting-edge technologies and contribute to advancements in semiconductor research.

Collaborations

Chang-Feng Yan has collaborated with esteemed colleagues such as Jenn-Gwo Hwu and Hao-Hsiung Lin. These partnerships have fostered innovation and have been instrumental in the development of his patented technologies.

Conclusion

Chang-Feng Yan's contributions to semiconductor technology and his innovative patents highlight his role as a leading inventor in the field. His work continues to influence advancements in electronic devices and memory systems.