Huatan, Taiwan

Chang-Chun Hsieh

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Nan Ya Technology Corporation. Active years: 2021.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Chang-Chun Hsieh. Retrieved from https://idiyas.com/inventor/chang-chun-hsieh

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 1 

% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1


Company Filing History:


Years Active: 2021

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1 patent (USPTO):Explore Patents

Title: Chang-Chun Hsieh: Innovator in Semiconductor Technology

Introduction

Chang-Chun Hsieh is a notable inventor based in Huatan, Taiwan. He has made significant contributions to the field of semiconductor technology, demonstrating innovation and expertise in his work.

Latest Patents

Chang-Chun Hsieh holds a patent related to a semiconductor structure and its manufacturing method. This patent describes a semiconductor structure that includes a substrate with a conductive trace, a die positioned over the substrate, a molding that covers the die, and a metallic layer that electrically connects to part of the conductive trace. This innovation represents a vital advancement in semiconductor manufacturing processes.

Career Highlights

Hsieh is currently associated with Nan Ya Technology Corporation, where he applies his extensive knowledge in semiconductor developments. His work not only contributes to the company's growth but also propels advancements in the semiconductor industry.

Collaborations

Throughout his career, Chang-Chun Hsieh has collaborated with talented coworkers, including Wu-Der Yang and Ching-Feng Chen. These collaborations highlight a productive environment that fosters innovation and technological advancement within the field.

Conclusion

Chang-Chun Hsieh's work exemplifies the spirit of innovation within the semiconductor industry. With a focus on developing new manufacturing methods and structures, he continues to make a lasting impact on technology. His efforts, alongside those of his collaborators, contribute to the ever-evolving landscape of semiconductor advancements.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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