Carl W Benyon, Jr

Title: The Innovations of Carl W Benyon, Jr.

Introduction

Carl W Benyon, Jr. is a notable inventor based in Trenton, NJ (US). He has made significant contributions to the field of technology, particularly in the area of radiation-hardened materials. With a total of 3 patents to his name, Benyon's work has had a lasting impact on the industry.

Latest Patents

One of his latest patents is a method for fabricating a radiation-hardened oxide. This innovative process involves forming an oxide layer on another layer at temperatures ranging from about 975°C to 1400°C, with a preference for 1000°C to 1200°C. The structure of the oxide layer is then damaged, typically through ion implantation with an inert element. Following this, the oxide layer undergoes annealing at temperatures between 850°C and 900°C, ideally at around 875°C. Another significant patent is the method of reducing edge current leakage in N channel silicon-on-sapphire devices. This novel process enhances the operation of silicon-on-sapphire devices by minimizing edge current leakage through a sputtering operation that deposits a layer of aluminum, which is later removed before scribing and dicing.

Career Highlights

Carl W Benyon, Jr. has been associated with RCA Inc., where he has applied his expertise in developing advanced technologies. His work has been instrumental in improving the performance and reliability of electronic devices.

Collaborations

Throughout his career, Benyon has collaborated with notable colleagues, including George A Swartz and Kenneth M Schlesier. These partnerships have contributed to the advancement of his innovative projects.

Conclusion

Carl W Benyon, Jr. stands out as a significant figure in the realm of invention, particularly in the development of radiation-hardened materials and silicon-on-sapphire devices. His contributions continue to influence the technology landscape today.