The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 27, 1978
Filed:
Dec. 30, 1976
Kenneth Mansfield Schlesier, Stockton, NJ (US);
Carl William Benyon, Jr, Trenton, NJ (US);
Joseph Michael Shaw, East Windsor Township, Mercer County, NJ (US);
RCA Corp., New York, NY (US);
Abstract
A method of making an improved aluminum oxide (sapphire) gate field effect transistor wherein the capacitance-voltage characteristic of the transistor is improved by annealing the aluminum oxide at a temperature less than the growth temperature of the aluminum oxide. A transistor annealed at a temperature less than the growth temperature is provided wherein the threshold voltage is the same as if the transistor were annealed at a temperature greater than the growth temperature; the capacitance-voltage characteristic of the transistor exhibiting markedly diminished hysteresis by annealing at a temperature less than the growth temperature.