The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 02, 1982
Filed:
Oct. 15, 1980
Applicant:
Inventors:
Carl W Benyon, Jr, Trenton, NJ (US);
John J O'Neill, Jr, Belle Mead, NJ (US);
Assignee:
RCA Corporation, New York, NY (US);
Primary Examiner:
Int. Cl.
CPC ...
C23C / ;
U.S. Cl.
CPC ...
2041 / ; 29571 ; 156656 ; 156657 ; 156665 ; 357 23 ;
Abstract
A novel process for improving the operation of silicon-on-sapphire devices by removing or minimizing edge current leakage. The reduction in leakage current is accomplished by subjecting the completed device to a sputtering operation and depositing thereon a layer of, for example, aluminum which is subsequently removed prior to scribing and dicing.
Benyon, Jr, Carl. (1982). Method of reducing edge current leakage in n channel silicon-on-sapphire (U.S. Patent No. 4313809). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4313809
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile