Quanzhou, China

Canfa Dai

USPTO Granted Patents = 1 

Average Co-Inventor Count = 7.0

ph-index = 1


Company Filing History:


Years Active: 2025

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1 patent (USPTO):Explore Patents

Title: Canfa Dai - Innovator in Three-Dimensional Memory Devices

Introduction

Canfa Dai is a notable inventor based in Quanzhou, China. He has made significant contributions to the field of memory devices, particularly with his innovative designs that enhance data storage capabilities. His work is recognized for its technical sophistication and practical applications in modern technology.

Latest Patents

Canfa Dai holds a patent for a three-dimensional memory device. This device features a staircase structure that comprises steps, each consisting of conductive layers and dielectric layers. A unique aspect of this design is that the sidewall of the conductive layer is recessed from the sidewall of the dielectric layer, creating a recess that exposes a portion of the bottom surface of the dielectric layer. This innovative approach aims to improve the efficiency and performance of memory storage.

Career Highlights

Canfa Dai is currently employed at Fujian Jinhua Integrated Circuit Co., Ltd. His role at the company allows him to work on cutting-edge technologies in the semiconductor industry. His expertise in memory devices has positioned him as a key player in the development of advanced storage solutions.

Collaborations

Throughout his career, Canfa Dai has collaborated with talented individuals such as Guoguo Kong and Shi-Wei He. These partnerships have fostered a creative environment that encourages innovation and the sharing of ideas.

Conclusion

Canfa Dai's contributions to the field of memory devices exemplify the spirit of innovation. His patented three-dimensional memory device showcases his ability to push the boundaries of technology. As he continues to work at Fujian Jinhua Integrated Circuit Co., Ltd., his future endeavors are anticipated to further advance the industry.

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