Location History:
- Hsin-Chu, TW (2016)
- Hsinchu County, TW (2017)
Company Filing History:
Years Active: 2016-2017
Title: The Innovations of Calvin Chiang
Introduction
Calvin Chiang is a notable inventor based in Hsinchu County, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the development of metal gate structures. With a total of 2 patents to his name, Chiang's work is recognized for its innovative approaches to enhancing semiconductor devices.
Latest Patents
Chiang's latest patents focus on methods and structures for metal gates in semiconductor devices. One patent describes a semiconductor device that includes a substrate and a gate structure positioned over it. This gate structure comprises a gate dielectric layer, a barrier layer, an oxide layer, and a work function metal layer. The innovative design aims to improve the performance and reliability of semiconductor devices. Another patent outlines a method that involves receiving a substrate and a dummy gate stack, followed by the removal of the dummy gate stack to create a trench. This method includes the formation of a gate dielectric layer, a barrier layer, an oxide layer, and a work function metal layer, with specific steps to ensure the integrity of the layers during the process.
Career Highlights
Calvin Chiang is currently employed at Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His work at this prestigious company has allowed him to contribute to cutting-edge technologies that are essential for modern electronics.
Collaborations
Chiang has collaborated with several talented individuals in his field, including Ju-Li Huang and Chao-Cheng Chen. These collaborations have fostered an environment of innovation and creativity, leading to advancements in semiconductor technology.
Conclusion
Calvin Chiang's contributions to the semiconductor industry through his patents and collaborations highlight his role as an influential inventor. His innovative methods for metal gates are paving the way for future advancements in semiconductor devices.