The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 12, 2017
Filed:
Aug. 30, 2016
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Inventors:
Ju-Li Huang, Nantou County, TW;
Chao-Cheng Chen, Hsin-Chu, TW;
Calvin Chiang, Hsinchu County, TW;
Ming-Chia Tai, Hsinchu County, TW;
Ming-Hsi Yeh, Hsin-Chu, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/70 (2006.01); H01L 29/49 (2006.01); H01L 21/8238 (2006.01); H01L 27/092 (2006.01); H01L 29/51 (2006.01); H01L 21/28 (2006.01); H01L 29/66 (2006.01); H01L 27/088 (2006.01);
U.S. Cl.
CPC ...
H01L 29/4966 (2013.01); H01L 21/28088 (2013.01); H01L 21/823821 (2013.01); H01L 21/823828 (2013.01); H01L 21/823842 (2013.01); H01L 21/823857 (2013.01); H01L 27/0886 (2013.01); H01L 27/092 (2013.01); H01L 29/517 (2013.01); H01L 29/66545 (2013.01);
Abstract
A semiconductor device having metal gates and methods of forming the same are disclosed. The semiconductor device includes a substrate and a gate structure over the substrate. The gate structure includes a gate dielectric layer over the substrate, a barrier layer over the gate dielectric layer, an oxide layer over the barrier layer, and a work function metal layer over the oxide layer.