The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 30, 2016
Filed:
Dec. 22, 2014
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Ju-Li Huang, Hsin-Chu, TW;
Calvin Chiang, Hsin-Chu, TW;
Ming-Chia Tai, Hsin-Chu, TW;
Ming-Hsi Yeh, Hsin-Chu, TW;
Chao-Cheng Chen, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A semiconductor device having metal gates and methods of forming the same are disclosed. The method includes receiving a substrate, a dummy gate stack formed over the substrate, and a structure surrounding the dummy gate stack. The method further includes removing the dummy gate stack, resulting in a trench in the structure. The method further includes forming a gate dielectric layer in the trench; forming a barrier layer over the gate dielectric layer; forming an oxide layer over the barrier layer; and forming a work function metal layer over the oxide layer. In embodiments, the method further includes removing the work function metal layer by an etchant containing phosphoric acid, wherein the oxide layer prevents the etchant from etching the barrier layer.