Asan, South Korea

Byungchul Kim

This inventor holds 1 USPTO granted patent. Top assignee: Corning Incorporated. Active years: 2022.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Byungchul Kim. Retrieved from https://idiyas.com/inventor/byungchul-kim-ug8qli51

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 8.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2022

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1 patent (USPTO):Explore Patents

Title: Byungchul Kim: Innovator in Substrate Processing

Introduction

Byungchul Kim is a notable inventor based in Asan, South Korea. He has made significant contributions to the field of substrate processing, showcasing his innovative spirit through his patented methods.

Latest Patents

Byungchul Kim holds a patent for "Methods for processing a substrate." This method involves a unique approach where a substrate is removably bonded to two carriers. The process initiates debonding at a specific location, allowing for the separation of a portion of the first carrier from the substrate. The method further includes the propagation of a debond front by applying sequential lifting forces to the first carrier.

Career Highlights

Kim is associated with Corning Incorporated, a company renowned for its advanced materials and technologies. His work at Corning has allowed him to develop and refine his innovative methods in substrate processing.

Collaborations

Throughout his career, Byungchul Kim has collaborated with talented individuals such as Christina Sue Bennett and Raymond Charles Cady. These collaborations have contributed to the advancement of his research and innovations.

Conclusion

Byungchul Kim's contributions to substrate processing highlight his role as an innovator in the field. His patented methods reflect a commitment to advancing technology and improving processes in the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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