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For the Inventor, By the Inventor

Suwon-si, South Korea

Byung-yong Choi

USPTO Granted Patents = 10

Average Co-Inventor Count = 4.5

ph-index = 3

Forward Citations = 27(Granted Patents)


Company Filing History:

goldMedal10 out of 131,214 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 2008-2011

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10 patents (USPTO):Explore Patents
1. 8044451 - Method of manufacturing semiconductor device having notched gate MOSFET (2011-10-25),
2. 7939408 - Non-volatile memory device for 2-bit operation and method of fabricating the same (2011-05-10),
3. 7875921 - Non-volatile memory device for 2-bit operation and method of fabricating the same (2011-01-25),
4. 7675105 - Non-volatile memory device for 2-bit operation and method of fabricating the same (2010-03-09),
5. 7652322 - Split gate flash memory device having self-aligned control gate and method of manufacturing the same (2010-01-26),
6. 7602010 - Multi-bit multi-level non-volatile memory device and methods of operating and fabricating the same (2009-10-13),
7. 7511358 - Nonvolatile memory device having multi-bit storage and method of manufacturing the same (2009-03-31),
8. 7465985 - Non-volatile memory device and methods of forming the same (2008-12-16),
9. 7419879 - Transistor having gate dielectric layer of partial thickness difference and method of fabricating the same (2008-09-02),
10. 7341912 - Split gate flash memory device having self-aligned control gate and method of manufacturing the same (2008-03-11),

Title: Byung-yong Choi: Innovator in Semiconductor Technology

Introduction

Byung-yong Choi is a prominent inventor based in Suwon-si, South Korea. He has made significant contributions to the field of semiconductor technology, holding a total of 10 patents. His work focuses on innovative methods for manufacturing semiconductor devices, which have implications for various electronic applications.

Latest Patents

One of his latest patents is a method of manufacturing a semiconductor device having a notched gate MOSFET. This method involves creating a cell transistor on a semiconductor substrate that utilizes a unique structure with electrodes shaped like spacers to form a gate. This design allows for multi-bit operations using localized bits, optimizing transistors for different functions based on their requirements. The cell transistor features a notch gate structure, a first channel region, and a memory layer strategically placed adjacent to the source and drain regions.

Another notable patent is for a non-volatile memory device designed for 2-bit operation. This device includes an active region and a gate that extends in a word line direction, with a charge storage layer and a charge blocking layer. The innovative design allows for enhanced performance and efficiency in memory operations.

Career Highlights

Byung-yong Choi is currently employed at Samsung Electronics Co., Ltd., a leading company in the technology sector. His work at Samsung has positioned him as a key player in advancing semiconductor technologies. His contributions have not only enhanced the company's product offerings but have also influenced the broader industry.

Collaborations

Throughout his career, Choi has collaborated with notable colleagues, including Dong-Gun Park and Choong-Ho Lee. These collaborations have fostered a creative environment that has led to groundbreaking innovations in semiconductor technology.

Conclusion

Byung-yong Choi's work exemplifies the spirit of innovation in the semiconductor industry. His patents and contributions continue to shape the future of technology, making him a significant figure in the field.

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