Company Filing History:
Years Active: 2012-2016
Title: Byoungsun Ju: Innovator in Semiconductor Technology
Introduction
Byoungsun Ju is a prominent inventor based in Seongnam-si, South Korea. He has made significant contributions to the field of semiconductor technology, holding a total of 4 patents. His work focuses on the development and manufacturing of advanced semiconductor devices.
Latest Patents
Ju's latest patents revolve around innovative semiconductor devices. One of his notable inventions includes a semiconductor device that features a charge storage pattern formed on a substrate. This device also incorporates a dielectric pattern on the charge storage pattern, along with a first conductive pattern made of silicon doped with a first impurity of a first concentration. This first conductive pattern is positioned on the dielectric pattern. Additionally, a second conductive pattern, which consists of metal silicide doped with a second impurity of a second concentration, is placed on the first conductive pattern. Notably, the first concentration may be higher than the second concentration, showcasing the intricate design and functionality of his inventions.
Career Highlights
Byoungsun Ju is currently employed at Samsung Electronics Co., Ltd., a leading company in the technology sector. His role at Samsung has allowed him to work on cutting-edge semiconductor technologies, contributing to the company's reputation for innovation and excellence in electronics.
Collaborations
Throughout his career, Ju has collaborated with talented individuals such as Sunggil Kim and Kihyun Hwang. These collaborations have fostered a creative environment that has led to the development of groundbreaking technologies in the semiconductor field.
Conclusion
Byoungsun Ju's contributions to semiconductor technology exemplify his dedication to innovation and excellence. His patents reflect a deep understanding of semiconductor devices and their manufacturing processes. His work continues to influence the industry and pave the way for future advancements.