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H01L 29/49 (2006.01); H01L 27/115 (2006.01); H01L 23/535 (2006.01); H01L 29/78 (2006.01); H01L 21/28 (2006.01); H01L 23/48 (2006.01); H01L 29/788 (2006.01); H01L 29/792 (2006.01); H01L 21/768 (2006.01);

U.S. Cl.

CPC ...

H01L 27/11526 (2013.01); H01L 21/28 (2013.01); H01L 21/76841 (2013.01); H01L 23/48 (2013.01); H01L 23/535 (2013.01); H01L 27/11573 (2013.01); H01L 29/4958 (2013.01); H01L 29/78 (2013.01); H01L 29/788 (2013.01); H01L 29/792 (2013.01); H01L 2924/0002 (2013.01);

Abstract

Provided are a semiconductor device and a method of manufacturing the semiconductor device. The semiconductor device includes a charge storage pattern formed on a substrate; a dielectric pattern formed on the charge storage pattern; a first conductive pattern including silicon doped with a first impurity of a first concentration, the first conductive pattern being disposed on the dielectric pattern; and a second conductive pattern including metal silicide doped with a second impurity of a second concentration, the second conductive pattern being disposed on the first conductive pattern. The first concentration may be higher than the second concentration.

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