Samsung Electronics Co., Ltd.

Byoungsun Ju

Kihyun Hwang

Sunggil Kim

Jintae Noh

Jung-Hwan Lee

Woonkyung Lee

Bonyoung Koo

Jin-Kyu Kang

Jeeyong Kim

Siyoung Choi

Provided are a semiconductor device and a method of manufacturing the semiconductor device. The semiconductor device includes a charge storage pattern formed on a substrate; a dielectric pattern formed on the charge storage pattern; a first conductive pattern including silicon doped with a first impurity of a first concentration, the first conductive pattern being disposed on the dielectric pattern; and a second conductive pattern including metal silicide doped with a second impurity of a second concentration, the second conductive pattern being disposed on the first conductive pattern. The first concentration may be higher than the second concentration.

Semiconductor devices

Semiconductor devices and methods of manufacturing the same

Provided is a nonvolatile memory device. The nonvolatile memory device includes: a tunnel insulation layer on a semiconductor substrate; a floating gate electrode including a bottom gate electrode doped with carbon and contacting the tunnel insulation layer and a top gate electrode on the bottom gate electrode; a gate interlayer insulation layer on the floating gate electrode; and a control gate electrode on the gate interlayer insulation layer.

Nonvolatile memory devices

Growing community of inventors

Seongnam-si, South Korea

Byoungsun Ju