The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 31, 2012
Filed:
Jul. 02, 2010
Applicants:
Byoungsun Ju, Seongnam-si, KR;
Sunggil Kim, Seoul, KR;
Jintae Noh, Suwon-si, KR;
Siyoung Choi, Seongnam-si, KR;
Kihyun Hwang, Seongnam-si, KR;
Inventors:
Byoungsun Ju, Seongnam-si, KR;
Sunggil Kim, Seoul, KR;
Jintae Noh, Suwon-si, KR;
Siyoung Choi, Seongnam-si, KR;
Kihyun Hwang, Seongnam-si, KR;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/788 (2006.01);
U.S. Cl.
CPC ...
Abstract
Provided is a nonvolatile memory device. The nonvolatile memory device includes: a tunnel insulation layer on a semiconductor substrate; a floating gate electrode including a bottom gate electrode doped with carbon and contacting the tunnel insulation layer and a top gate electrode on the bottom gate electrode; a gate interlayer insulation layer on the floating gate electrode; and a control gate electrode on the gate interlayer insulation layer.