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For the Inventor, By the Inventor

Kyungki-do, South Korea

Byeong-yun Nam

USPTO Granted Patents = 8

Average Co-Inventor Count = 3.4

ph-index = 4

Forward Citations = 40(Granted Patents)


Company Filing History:

goldMedal8 out of 131,214 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 1997-2006

where 'Filed Patents' based on already Granted Patents

8 patents (USPTO):
1. 7060575 - Semiconductor device having transistor and method of manufacturing the same (2006-06-13),
2. 7009257 - Methods of manufacturing integrated circuit devices having reduced contact resistance between a substrate and a contact pad while maintaining separation of the substrate and the contact pad and integrated circuit devices formed thereby (2006-03-07),
3. 6689654 - Methods of manufacturing integrated circuit devices having reduced contact resistance between a substrate and a contact pad while maintaining separation of the substrate and the contact pad (2004-02-10),
4. 6576963 - Semiconductor device having transistor (2003-06-10),
5. 6573168 - Methods for forming conductive contact body for integrated circuits using dummy dielectric layer (2003-06-03),
6. 6187686 - Methods for forming patterned platinum layers using masking layers including titanium and related structures (2001-02-13),
7. 6169009 - Methods of etching platinum group metal film and forming lower electrode of capacitor (2001-01-02),
8. 5693546 - Methods of forming thin film transistors having lightly-doped drain and (1997-12-02),

Title: Byeong-yun Nam: Innovator in Semiconductor Technology

Introduction

Byeong-yun Nam is a prominent inventor based in Kyungki-do, South Korea. He has made significant contributions to the field of semiconductor technology, holding a total of 8 patents. His work focuses on improving the efficiency and performance of semiconductor devices.

Latest Patents

One of his latest patents involves a semiconductor device that includes a transistor and a method of manufacturing the same. This method provides a way to form self-aligned contact holes that expose source and drain regions in a semiconductor substrate using only etch mask layers. The process includes forming sacrificial spacers made of a material with excellent etching selectivity at the sidewalls of gate electrodes in a cell area. Additionally, an interlevel dielectric layer is created from a material that also has excellent etching selectivity to the etch mask layers. The removal of the sacrificial spacers occurs during the formation of the self-aligned contact holes. Furthermore, dielectric spacers are formed from a material with a low dielectric constant, which helps prevent a reduction in the operational speed of semiconductor devices.

Another significant patent details methods for manufacturing integrated circuit devices that have reduced contact resistance between a substrate and a contact pad. This innovation maintains the separation of the substrate and the contact pad while ensuring the integrity of the integrated circuit devices formed.

Career Highlights

Byeong-yun Nam is currently employed at Samsung Electronics Co., Ltd., where he continues to push the boundaries of semiconductor technology. His work has been instrumental in developing advanced manufacturing techniques that enhance device performance.

Collaborations

He has collaborated with notable coworkers, including Beom-jun Jin and Young-pil Kim, contributing to various innovative projects within the company.

Conclusion

Byeong-yun Nam's contributions to semiconductor technology exemplify the spirit of innovation. His patents reflect a commitment to advancing the field and improving the functionality of electronic devices.

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