Brian Butcher

Title: Brian Butcher: Innovator in Resistive Random Access Memory Technologies

Introduction

Brian Butcher is a noted inventor based in San Jose, California. He has contributed significantly to the field of memory technologies, particularly with his innovative work on resistive random access memory (ReRAM) cells. With one notable patent to his name, Butcher stands out in the landscape of modern electronics.

Latest Patents

Brian Butcher holds a patent titled "Doped oxide dielectrics for resistive random access memory cells." This patent provides methods for fabricating memory cells such as ReRAM cells. The innovative technique involves forming a first layer comprising two high-k dielectric materials, where one material has a higher dielectric constant than the other. Specifically, in some embodiments, hafnium oxide and titanium oxide are utilized to construct the first layer. Notably, this higher-k material is present at a lower concentration, with a concentration ratio between approximately 3 and 7. The formation of the first layer is achieved through atomic layer deposition and is subsequently annealed in an oxygen-containing environment. Following this, a second layer consisting of a low-k dielectric material like silicon oxide is formed, along with the creation of an electrode. The memory cell undergoes a nitrogen anneal at a higher temperature compared to the oxygen anneal, marking a significant advancement in memory cell technology.

Career Highlights

Brian Butcher's career includes impactful roles at several leading companies in the technology sector. He has worked at Intermolecular, Inc. and the renowned International Business Machines Corporation (IBM). Throughout his tenure, Butcher has played a pivotal role in research and development within the field of semiconductor technology, leading to his notable patent achievements.

Collaborations

During his career, Brian has collaborated with talented professionals, including his coworkers Randall Higuchi and Yun Yu Wang. Their joint efforts have contributed to significant advancements in memory technology and semiconductor devices, showcasing the importance of teamwork in driving innovation.

Conclusion

Brian Butcher's innovation in resistance random access memory technology, highlighted by his patent on doped oxide dielectrics, reflects his commitment to advancing the field of electronics. His work and collaborations with leading experts underscore the critical nature of inventive contributions in the technology sector. As advancements in memory technologies continue to evolve, Brian Butcher stands as a distinguished inventor making a noteworthy impact in the industry.