Alexandria, VA, United States of America

Brenda L VanMil


Average Co-Inventor Count = 5.3

ph-index = 1

Forward Citations = 3(Granted Patents)


Location History:

  • Alexandria, VA (US) (2013 - 2014)
  • Missoula, MT (US) (2016)

Company Filing History:


Years Active: 2013-2016

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3 patents (USPTO):Explore Patents

Title: Innovations of Brenda L VanMil

Introduction

Brenda L VanMil is a prominent inventor based in Alexandria, VA (US). She has made significant contributions to the field of silicon carbide (SiC) technology, holding a total of three patents. Her work focuses on methods to improve the quality of SiC epitaxial layers, which are crucial for various electronic applications.

Latest Patents

One of her latest patents is titled "Reduction of basal plane dislocations in epitaxial SiC." This patent discloses a method for reducing or eliminating basal plane dislocations from SiC epilayers. The invention involves using an off-axis SiC substrate with an angle of no more than 6 degrees and growing a SiC epitaxial layer on this substrate. The resulting epitaxial layer is characterized by having no more than two basal plane dislocations per square centimeter at its surface. The method includes specific growth conditions such as a temperature range of 1530-1650 degrees Celsius and a pressure of 50-125 mbar.

Another notable patent is the "Method of producing epitaxial layers with low basal plane dislocation concentrations." This method also involves flowing silicon and carbon source gases into a growth chamber to epitaxially grow silicon carbide on a wafer. The process includes stopping or reducing the flow of the silicon source gas to interrupt growth while maintaining an elevated temperature, before resuming the flow to reinitiate growth.

Career Highlights

Brenda L VanMil works for the United States as represented by the Secretary of the Navy. Her innovative approaches to SiC technology have positioned her as a key figure in the field. She has demonstrated a commitment to advancing semiconductor technology through her research and patent contributions.

Collaborations

Brenda collaborates with notable colleagues, including Rachael L Myers-Ward and David Kurt Gaskill. Their combined expertise enhances the research and development efforts in the field of silicon carbide technology.

Conclusion

Brenda L VanMil's contributions to the field of silicon carbide epitaxy are noteworthy. Her innovative patents reflect her dedication to improving semiconductor technology. Through her work, she continues to influence advancements in the industry.

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