The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 18, 2014
Filed:
Oct. 09, 2008
Robert E Stahlbush, Silver Spring, MD (US);
Brenda L Vanmil, Alexandria, VA (US);
Kok-keong Lew, Hillsboro, OR (US);
Rachael L Myers-ward, Alexandria, VA (US);
David Kurt Gaskill, Alexandria, VA (US);
Charles R. Eddy, Jr., Columbia, MD (US);
Robert E Stahlbush, Silver Spring, MD (US);
Brenda L VanMil, Alexandria, VA (US);
Kok-Keong Lew, Hillsboro, OR (US);
Rachael L Myers-Ward, Alexandria, VA (US);
David Kurt Gaskill, Alexandria, VA (US);
Charles R. Eddy, Jr., Columbia, MD (US);
The United States of America, as represented by the Secretary of the Navy, Washington, DC (US);
Abstract
A method of: flowing a silicon source gas, a carbon source gas, and a carrier gas into a growth chamber under growth conditions to epitaxial grow silicon carbide on a wafer in the growth chamber; stopping or reducing the flow of the silicon source gas to interrupt the silicon carbide growth and maintaining the flow of the carrier gas while maintaining an elevated temperature in the growth chamber for a period of time; and resuming the flow of the silicon source gas to reinitiate silicon carbide growth. The wafer remains in the growth chamber throughout the method.