The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 11, 2016
Filed:
Aug. 20, 2010
Rachael L Myers-ward, Springfield, VA (US);
David Kurt Gaskill, Alexandria, VA (US);
Brenda L Vanmil, Missoula, MT (US);
Robert E Stahlbush, Silver Spring, MD (US);
Charles R. Eddy, Jr., Columbia, MD (US);
Rachael L Myers-Ward, Springfield, VA (US);
David Kurt Gaskill, Alexandria, VA (US);
Brenda L VanMil, Missoula, MT (US);
Robert E Stahlbush, Silver Spring, MD (US);
Charles R. Eddy, Jr., Columbia, MD (US);
The United States of America, as represented by the Secretary of the Navy, Washington, DC (US);
Abstract
A method for reducing/eliminating basal plane dislocations from SiC epilayers is disclosed. An article having: an off-axis SiC substrate having an off-axis angle of no more than 6°; and a SiC epitaxial layer grown on the substrate. The epitaxial layer has no more than 2 basal plane dislocations per cmat the surface of the epitaxial layer. A method of growing an epitaxial SiC layer on an off-axis SiC substrate by: flowing a silicon source gas, a carbon source gas, and a carrier gas into a growth chamber under growth conditions to epitaxially grow SiC on the substrate in the growth chamber. The substrate has an off-axis angle of no more than 6°. The growth conditions include: a growth temperature of 1530-1650° C.; a pressure of 50-125 mbar; a C/H gas flow ratio of 9.38×10-1.5×10; a C/Si ratio of 0.5-3; a carbon source gas flow rate during ramp to growth temperature from 0 to 15 sccm; and an electron or hole concentration of 10-10/cm.