Breandán Pol Og Ó hAnnaidh

Title: Breandán Pol Og Ó hAnnaidh: Innovator in Bipolar Junction Transistors

Introduction

Breandán Pol Og Ó hAnnaidh is a notable inventor based in Raheen, Ireland. He has made significant contributions to the field of electronics, particularly in the development of bipolar junction transistors. With a total of two patents to his name, Ó hAnnaidh's work has advanced the understanding and functionality of these essential components in modern electronics.

Latest Patents

Ó hAnnaidh's latest patents include innovative designs for bipolar junction transistors. The first patent focuses on a method of forming an emitter for a bipolar junction transistor. This design features an emitter structure positioned above the upper surface of the base region, optimizing gain for specific transistor types. The second patent introduces a charge control structure for a bipolar junction transistor, which effectively manages charge distribution in the depletion region. This structure includes lateral and vertical field plates that enhance the performance of the transistor by reducing the Early effect.

Career Highlights

Breandán Pol Og Ó hAnnaidh is currently employed at Analog Devices International Unlimited Company, where he continues to push the boundaries of electronic innovation. His work has been instrumental in developing advanced semiconductor technologies that are crucial for various applications in the electronics industry.

Collaborations

Ó hAnnaidh has collaborated with esteemed colleagues such as Edward John Coyne and Alan Brannick. These partnerships have fostered a creative environment that encourages the exchange of ideas and the development of groundbreaking technologies.

Conclusion

Breandán Pol Og Ó hAnnaidh is a distinguished inventor whose contributions to bipolar junction transistors have significantly impacted the field of electronics. His innovative patents and collaborative efforts continue to shape the future of semiconductor technology.