The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 07, 2016
Filed:
Nov. 12, 2014
Applicant:
Analog Devices Global, Hamilton, BM;
Inventors:
Breandan Pol Og O hAnnaidh, Raheen, IE;
Seamus Paul Whiston, Raheen, IE;
Edward John Coyne, Athenry, IE;
William Allan Lane, Waterfall, IE;
Donal Peter McAuliffe, Raheen, IE;
Assignee:
Analog Devices Global, Hamilton, BM;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/06 (2006.01); H01L 29/78 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0692 (2013.01); H01L 29/41758 (2013.01); H01L 29/42376 (2013.01); H01L 29/66568 (2013.01); H01L 29/78 (2013.01);
Abstract
A transistor is provided in which an elongate drain region has end portions formed in parts of the transistor where features of the transistor structure have been modified or omitted. These structures lessen the current flow or electric field gradients at the end portions of the drain. This provides a transistor that has improved on-state breakdown performance without sacrificing off state breakdown performance.