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For the Inventor, By the Inventor

Boise, ID, United States of America

Bradley J Howard

This inventor holds 48 USPTO granted patents, primarily in Plasma Etching. Top assignee: Micron Technology Incorporated. Active years: 1995-2012.

USPTO Granted Patents = 48

% Patents Active = 77.1

Average Co-Inventor Count = 1.6

ph-index = 9

Forward Citations = 302(Granted Patents)


Location History:

  • Livermore, CA (US) (2007 - 2009)
  • Boise, ID (US) (1995 - 2012)

Company Filing History:

goldMedal48 out of 39,149 
 
Micron Technology Incorporated
 patents

Years Active: 1995-2012

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Areas of Expertise:
Plasma Etching
Semiconductor Devices
Contact Openings
Striations Control
Temperature-Sensitive Etch
Integrated Circuit
Capacitor Formation
Photo-Definable Layers
Surface Defects
Recessed Container Cells
Self-Aligned Structures
Anisotropic Etch
48 patents (USPTO):Explore Patents
1. 8093155 - Method of controlling striations and CD loss in contact oxide etch (2012-01-10),
2. 7625460 - Multifrequency plasma reactor (2009-12-01),
3. 7615164 - Plasma etching methods and contact opening forming methods (2009-11-10),
4. 7573116 - Etch aided by electrically shorting upper and lower sidewall portions during the formation of a semiconductor device (2009-08-11),
5. 7538028 - Barrier layer, IC via, and IC line forming methods (2009-05-26),
6. 7470625 - Method of plasma etching a substrate (2008-12-30),
7. 7323292 - Process for using photo-definable layers in the manufacture of semiconductor devices and resulting structures of same (2008-01-29),
8. 7271089 - Barrier layer, IC via, and IC line forming methods (2007-09-18),
9. 7255803 - Method of forming contact openings (2007-08-14),
10. 7122480 - Method of plasma etching a substrate (2006-10-17),
11. 7094699 - Etch aided by electrically shorting upper and lower sidewall portions during the formation of a semiconductor device (2006-08-22),
12. 6958297 - Plasma etching methods (2005-10-25),
13. 6812154 - Plasma etching methods (2004-11-02),
14. 6753264 - Method of controlling striations and CD loss in contact oxide etch (2004-06-22),
15. 6730609 - Etch aided by electrically shorting upper and lower sidewall portions during the formation of a semiconductor device (2004-05-04),

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Profile summary based on public USPTO records.
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