The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 25, 2005
Filed:
May. 23, 2003
David S. Becker, Boise, ID (US);
Bradley J. Howard, Boise, ID (US);
Kevin G. Donohoe, Boise, ID (US);
David S. Becker, Boise, ID (US);
Bradley J. Howard, Boise, ID (US);
Kevin G. Donohoe, Boise, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
A patterned organic masking layer is formed outwardly of a feature layer to be etched. It has at least one feature pattern having a minimum feature dimension of less than or equal to 0.3 micron. The feature pattern is plasma etched into the feature layer using the masking layer as a mask. The plasma etching comprises at least one etching segment using an etching gas comprising one gas compound comprising carbon, hydrogen and at least one halogen under conditions effective to produce at least that portion of the one feature pattern in the feature layer to have a sidewall taper, if any, of less than or equal to 5° and an organic masking layer top outer surface roughness proximate the feature pattern at a conclusion of the etching segment which is characterizable by an average value less than 100 Angstroms. Other implementations are also contemplated.