Bowen Xu

Title: The Innovative Contributions of Bowen Xu

Introduction

Bowen Xu is a notable inventor based in Shanghai, SH. He has made significant contributions to the field of lithography through his innovative patent. His work focuses on improving the accuracy of critical dimension measurements, which is essential in semiconductor manufacturing.

Latest Patents

Bowen Xu holds a patent for a "Critical Dimension Error Analysis Method." This invention discloses a systematic approach to analyzing critical dimension errors during lithography processes. The method involves performing lithography on a wafer, measuring critical dimension values, and removing extreme outliers to enhance accuracy. By employing a reconstruction model fitting method, the invention allows for the calculation of rebuilt critical dimension values, which are then modified according to a correction model. This process ensures a quick and precise analysis of critical dimension errors.

Career Highlights

Bowen Xu is currently associated with Shanghai IC R&D Center Co., Ltd. His expertise in lithography and critical dimension analysis has positioned him as a valuable asset in the semiconductor industry. His innovative approach has the potential to improve manufacturing processes significantly.

Collaborations

Bowen has collaborated with talented coworkers, including Xueru Yu and Hongxia Sun. Their combined efforts contribute to the advancement of technology in their field.

Conclusion

Bowen Xu's contributions to the field of lithography through his innovative patent demonstrate his commitment to enhancing manufacturing accuracy. His work is a testament to the importance of innovation in technology.