Shanghai Ic R&d Center Co., Ltd

Bowen Xu

Pengfei Wang

Tao Zhou

Jiebin Duan

Hao Fu

Lingyi Guo

Yan Yan

Xueru Yu

Xiucui Wang

Liren Li

Chen Li

Hongxia Sun

The present invention disclosures a critical dimension error analysis method, comprising: S: performing lithography processes on a wafer, measuring the critical dimension (CD) values of the test points in each of the fields respectively; M and N are integers greater than 1; S: removing extreme outliers from the critical dimension (CD) values; S: rebuilding remaining CD values by a reconstruction model fitting method, and obtaining rebuilt critical dimension (CD″) values, according to relative error between CD″ and CD, dividing the rebuilt critical dimension (CD″) values into scenes and the number of the scenes is A; S: calculating components and corresponding residuals of the test points in each of the scenes under a reference system corresponding to a correction model by parameter estimation; S: modifying machine parameters and masks by the correction model according to above calculation results. The present invention uses an outer limit to remove extreme outliers, so as to analyze a critical dimension error during a lithography process quickly and accurately.

Critical dimension error analysis method

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Shanghai, Saint Helena

Bowen Xu