Boting Liu

Title: Boting Liu: Innovator in High-Electron-Mobility Transistor Technology

Introduction

Boting Liu is a prominent inventor based in Xiamen, China. He has made significant contributions to the field of semiconductor technology, particularly in the development of high-electron-mobility transistors (HEMTs). With a total of 2 patents to his name, Liu's work is recognized for its innovative approaches and technical advancements.

Latest Patents

Liu's latest patents include an epitaxial structure for high-electron-mobility transistors and methods for manufacturing the same. This epitaxial structure comprises a substrate, a nucleation layer, a buffer layered unit, a channel layer, and a barrier layer, all sequentially stacked. The buffer layered unit features multiple p-i-n heterojunction stacks, each consisting of p-type, i-type, and n-type layers made from AlGaN materials. The design allows for a gradual decrease in x and an increase in z along the direction away from the nucleation layer, while y remains consistent, ranging from 0 to 0.7.

Career Highlights

Throughout his career, Boting Liu has worked with notable companies such as Hunan Sanan Semiconductor Co., Ltd. and Xiamen Sanan Integrated Circuit Co., Ltd. His experience in these organizations has contributed to his expertise in semiconductor technologies and innovations.

Collaborations

Liu has collaborated with several professionals in his field, including Yutao Fang and Shuai Chen. These collaborations have likely enhanced his research and development efforts, leading to advancements in his patented technologies.

Conclusion

Boting Liu is a key figure in the advancement of high-electron-mobility transistor technology. His innovative patents and collaborations reflect his commitment to pushing the boundaries of semiconductor research.