The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 06, 2025
Filed:
Nov. 21, 2022
Hunan San'an Semiconductor Co., Ltd., Hunan, CN;
Boting Liu, Xiamen, CN;
Yutao Fang, Xiamen, CN;
Shuai Chen, Xiamen, CN;
Nientze Yeh, Xiamen, CN;
Fuchin Chang, Xiamen, CN;
HUNAN SAN'AN SEMICONDUCTOR CO., LTD., Hunan, CN;
Abstract
An epitaxial structure for a high-electron-mobility transistor includes a substrate, a nucleation layer, a buffer layered unit, a channel layer, and a barrier layer sequentially stacked on one another in such order. The buffer layered unit includes a plurality of p-i-n heterojunction stacks. Each of the p-i-n heterojunction stacks includes p-type, i-type, and n-type layers which are made of materials respectively represented by chemical formulas of AlGaN, AlGaN, and AlGaN. For each of the p-i-n heterojunction stacks, x decreases and z increases along a direction away from the nucleation layer, and y is consistent and ranges from 0 to 0.7.