Xiamen Sanan Integrated Circuit Co., Ltd.

Hunan Sanan Semiconductor Co., Ltd.

Boting Liu

Yutao Fang

Nien-Tze Yeh

Nientze Yeh

Shuai Chen

Kaixuan Zhang

Fuchin Chang

An epitaxial structure for a high-electron-mobility transistor includes a substrate, a nucleation layer, a buffer layered unit, a channel layer, and a barrier layer sequentially stacked on one another in such order. The buffer layered unit includes a plurality of p-i-n heterojunction stacks. Each of the p-i-n heterojunction stacks includes p-type, i-type, and n-type layers which are made of materials respectively represented by chemical formulas of AlGaN, AlGaN, and AlGaN. For each of the p-i-n heterojunction stacks, x decreases and z increases along a direction away from the nucleation layer, and y is consistent and ranges from 0 to 0.7.

Epitaxial structure for high-electron-mobility transistor and method for manufacturing the same

An epitaxial structure for a high-electron-mobility transistor includes a substrate, a nucleation layer, a buffer layered unit, a channel layer, and a barrier layer sequentially stacked on one another in such order. The buffer layered unit includes at least one multiple quantum well structure containing a plurality of p-i-n heterojunction stacks. Each of the p-i-n heterojunction stacks includes p-type, i-type, and n-type layers which are alternately stacked along a direction away from the nucleation layer, and which are made of materials respectively represented by chemical formulas of AlGaN, AlGaN, and AlGaN. For each of the p-i-n heterojunction stacks, x gradually decreases and z gradually increases along the direction away from the nucleation layer, and y is consistent and ranges from 0 to 0.7.

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Boting Liu