Company Filing History:
Years Active: 2018-2020
Title: Botang Shao: Innovator in Memory Technology
Introduction
Botang Shao is a notable inventor based in Austin, TX, who has made significant contributions to the field of memory technology. With a total of three patents to his name, he has demonstrated a commitment to advancing the capabilities of memory systems.
Latest Patents
One of Botang Shao's latest patents is titled "Dynamic compression in an electrically erasable programmable read only memory (EEPROM) emulation system." This invention involves an EEPROM emulation system that includes a non-volatile memory organized into multiple sectors, each containing several record locations. The system is designed to program new data into an active sector and assess the number of failure-to-program occurrences. If these occurrences exceed a certain threshold, the system determines whether compression is necessary and selectively performs it based on another threshold.
Another significant patent is "Full address coverage during memory array built-in self-test with minimum transitions." This invention provides a method for generating an address sequence in a memory device. It involves storing unique addresses in two storage elements and generating a sequence that tests the memory array efficiently. The sequence ensures that each unique address transitions only once, optimizing the built-in self-test process.
Career Highlights
Botang Shao is currently employed at NXP USA, Inc., where he continues to innovate in the field of memory technology. His work has contributed to the development of advanced memory systems that enhance performance and reliability.
Collaborations
Some of Botang Shao's coworkers include Fuchen Mu and Timothy J. Strauss, with whom he collaborates on various projects within the company.
Conclusion
Botang Shao's contributions to memory technology through his innovative patents and work at NXP USA, Inc. highlight his role as a key figure in advancing this critical field. His inventions are paving the way for more efficient and reliable memory systems.